HJT BIFACIAL MODULE
POWER OUTPUT RANGE
IMAXIMUM SYSTEM VOLTAGE
MAXIMUM EFFICIENCY
MODULE DIMENSIONS
Using higher efficiency heterojunction solar cell , up to more than 20.5% module efficiency
Leading Half-cut technology of HJT cell
Most stable Power temperature coefficient of -0.24% result in stable yield gain
Using N type wafer, no LID caused by B-O pair
Excellent PID resistance
85% bifacial factor brings more additional yield gain from rearside by backside
“The parameters are subject to the actual situation, and the final interpretation right belongs to the company”
